Add unit prefix as a suffix to the number, for example: 1M. This calculator will automatically add unit prefixes where appropriate. They will be added as a suffix to the calculated value. For example, 0.0012 V (1.2 mV) may be displayed as 1.2 mV, 1.2mV or 1.2m [V] depending on output field format.
Supported unit prefixes:
f
p
n
u
m
c
k
M
G
T
P
femto
pico
nano
micro
milli
centi
(none)
kilo
mega
giga
tera
peta
10-15
10-12
10-9
10-6
10-3
10-2
100
103
106
109
1012
1015
For squared quantities (for example areas), only the following suffixes are supported: u, m, c, k, M
For convenience, u is used instead of μ.
Version 0.99b-WIP (20220726). Using KaTeX 0.11.1 for equations. This tool is provided without any warranty. Use at your own risk.
Ohm's law
Enter two quantities, the third one will be calculated $R = \dfrac{V}{I}$
Power (for DC circuits)
Enter two quantities, the third one will be calculated $P = V \cdot I$
Power (for AC circuits)
Enter two quantities, the third one will be calculated
$P = V \cdot I \cdot \mathrm{cos}(\phi)$
$Q = V \cdot I \cdot \mathrm{cos}(\phi)$
$ |S| = V_{rms} \cdot I_{rms}$
E6/E12/E24 series (IEC 60063 standard)
LED resistor calculator
$R = \dfrac{V_{in}-V_{LED}}{I_{LED}}$
Capacitance, 3 digit code conversion
Enter either capacitance or code, the other value will be auto-calculated
Allowable range: 10pF to 99mF (although capacitors bigger than 10uF usually aren't marked this way)
Tolerance letter
B
C
D
F
G
J
K
M
Z
Tolerance value
±0.1pF
±0.25pF
±0.5pF
±1%
±2%
±5%
±10%
±20%
+80, -20%
Capacitor reactance
Enter two quantities, the third one will be calculated $X_C = \dfrac{1}{2 \cdot \mathrm{\pi} \cdot f \cdot C}$
Inductor reactance
Enter two quantities, the third one will be calculated $X_L = 2 \cdot \mathrm{\pi} \cdot f \cdot L$
RLC circuit impedance
$X_L = 2 \cdot \mathrm{\pi} \cdot f \cdot L$
$X_C = \dfrac{1}{2 \cdot \mathrm{\pi} \cdot f \cdot C}$ Serial:
$Z = R + j \cdot 2 \cdot \mathrm{\pi} \cdot f \cdot L - \dfrac{j}{2 \cdot \mathrm{\pi} \cdot f \cdot C}$
$|Z| = \sqrt{R^2+(X_L-X_C)^2}$
If $X_L > X_C$, then $\varphi_i = -\mathrm{arccos} (\dfrac{R}{|Z|})$
If $X_L < X_C$, then $\varphi_i = \mathrm{arccos} (\dfrac{R}{|Z|})$ Parallel:
$|Z| = \dfrac{1}{\sqrt{\frac{1}{R^2} + (\frac{1}{X_L}-\frac{1}{X_C})^2}}$
$\varphi_i = -\mathrm{arctan} (\dfrac{R}{\frac{1}{\frac{1}{X_L} - \frac{1}{X_C}}})$
Resonant frequency
Enter two quantities, the third one will be calculated. $f_r = \dfrac{1}{2 \cdot \mathrm{\pi} \cdot \sqrt{ L \cdot C}}$
Critical damping (aperiodic) resistance for RLC circuit, LC characteristic impedance
Input quantities: $Q < 0.5$ ($Q=\dfrac{R}{Z_0}$ for parallel circuit, $Q=\dfrac{Z_0}{R}$ for series circuit, $Z_0 = \sqrt{\dfrac{L}{C}}$)
Capacitor peak dv/dt, peak current
Enter two quantities, the third one will be calculated. $I_{max}=C \cdot {\mathrm{max}(\dfrac{\mathrm{d}v(t)}{\mathrm{d}t})}$
Capacitive dropper - average rectified current, sine input
This calculator assumes a sine wave input + a constant DC load voltage. For reasonable accuracy, set the limiting resistor value to ≤1/10 of XC at the selected frequency.
Using the resistance calculated through the classic XC calculation to calculate the current gives the RMS current value, not the average rectified value, will give inaccurate current & power (~10% error) with a constant voltage load.
The equation was obtained by integrating the average current (i(t)=C*dv/dt) using a "cut" sine wave according to the voltages, and was verified using LTspice.
$I_{avg}=4 \cdot f \cdot C \cdot (V_{p-in}-V_{load}) = I_{avg} = 4 \cdot f \cdot C \cdot (\sqrt{2} \cdot V_{RMS-in} - V_{load})$
This calculator uses the "10-degree rule" (doubling the lifetime with every 10°C temperature drop - compared to the lifetime at the rated max. temperature given the specified ripple current and voltage - k1=2, k2=10) for "classic" liquid electrolytic/hybrid capacitors and the "20-degree rule" (10 times the life with a 20°C temperature drop - k1=10, k2=20).
The estimation won't be particularly accurate at temperatures under 40°C. Also, the lifespan will be much lower at higher currents than specified, at lower currents, it will be higher - refer to manufacturer normograms/datasheets/app-notes for such cases, or the paragraph below.
Optional input - Alternatively, ΔTC-norm (core self-heating over ambient temperature at rated current, depends on exact capacitor, can be about 5-20 degrees), the rated RMS current at the specified frequency, and the actual load current can be used to calculate lifespan at different currents.
The equations and results were checked against application notes and datasheets provided by big capacitor manufacturers such as Rubycon, TDK or Capxon and were found to be reasonably accurate and universal. No endorsement of this calculator by any of these companies is implied. This calculator should be used as a reference, for guaranteed values, check data provided by the manufacturer.
Enter two quantities, the other one will be calculated. $\mathrm{max} \dfrac{\mathrm{d}v(t)}{\mathrm{d}t} = 2 \cdot \mathrm{\pi} \cdot f \cdot V_m$
Sine wave amplitude ↔ RMS
Enter one quantity, the other one will be calculated. $V_{pk} = \sqrt{2} \cdot V_{rms}$
Rise time, bandwidth
Select encoding/use, enter one quantity, the other one will be calculated. Assuming first order system, 3 dB permissible attenuation at max. frequency, 10% to 90% rise time, some rounding is done. NRZ/RZ = (Non) Return-To-Zero $t_r = \dfrac{0.35}{BW} \mathrm{(RZ)}, t_r = \dfrac{0.7}{BW} \mathrm{(NRZ)}$
RC low-pass filter
Enter three quantities, the fourth one will be calculated.
RC high-pass filter
Enter three quantities, the fourth one will be calculated.
Power ratio / decibel conversion
Input one quantity, the other one will be calculated. $\mathrm{ratio (dB)} = 10 \cdot \mathrm{lg(ratio)}$
Voltage ratio / decibel conversion
Enter one quantity, the other one will be calculated. $\mathrm{ratio (dB)} = 20 \cdot \mathrm{lg(ratio)}$
Power / dBm conversion
Enter one quantity, the other one will be calculated. $P = 10^{(0.1 \cdot ({P_{dBm}-30}))}$
For more complex/universal calculations with more possible parameters, use "Gapped or ungapped inductor/transformer saturation current & inductance".
Enter either inductance or turn count, the other quantity will be automatically calculated. $L = \dfrac{\mu_r \cdot \mathrm{\mu_0} \cdot N^2 \cdot S}{\mathrm{\pi} \cdot d}$
Inductance/turns
This calculator assumes a reasonably high μ and a closed magnetic circuit.
For more complex/universal calculations with more possible parameters, use "Gapped or ungapped inductor/transformer saturation current & inductance".
Enter four quantities, the remaining one will be automatically calculated. $L = \dfrac{N^2 \cdot S \cdot \mathrm{\mu_0} \cdot \mathrm{\mu_r}}{l}$
Gapped or ungapped inductor/transformer, inductance and saturation current
Enter three quantities, the other one will be calculated. $C = \dfrac{S \cdot \epsilon_r \cdot \mathrm{\epsilon_0} }{l}$
Capacitor charge
Enter five quantities, the other one will be automatically calculated
$\tau = R \cdot C$
$t_{total} = \tau \cdot \mathrm{ln} (\dfrac{V_{supply} - V_{initial}}{V_{supply} - V_{final}})$
$V_{final} = V_{initial} + (V_{supply} - V_{initial}) \cdot (1-e^{-t/\tau})$
Capacitor discharge
Enter four quantities, the other one will be automatically calculated
$\tau = R \cdot C$
$V_{final} = V_{initial} \cdot (1-e^{-t/\tau})$
Capacitor stored energy
Enter two quantities, the third one will be automatically calculated $E = 0.5 \cdot C \cdot V^2$
ESR ↔ tan δ
Enter the frequency, capacitance and either ESR or tan δ $ESR = X_C \cdot \mathrm{tan}( \delta)$
A duty cycle lower than 50% can be achieved by connecting a diode in parallel to R2.
$V_{ctrl}$ $=$ Control voltage $(\dfrac{\% \mathrm{~of~} V_{CC}}{100})$
No diode parallel to R2:
$T_{low} = \mathrm{ln}(2) \cdot R_2 \cdot C$
No diode parallel to R2:
$T_{high} = (\mathrm{ln}(\dfrac{1-0.5\cdot {V_{ctrl}}}{1-V_{ctrl}}) \cdot (R1+R2) \cdot C$
Diode parallel to R2:
$T_{high} = (\mathrm{ln}(\dfrac{1-0.5\cdot {V_{ctrl}}}{1-V_{ctrl}}) \cdot R1 \cdot C$ (diode drop is neglected)
$T = T_{low} + T_{high}$
$f = \dfrac{1}{T}$
$\mathrm{Duty} (\%) = 100\cdot \dfrac{T_{high}}{T}$
Monostable 555 period
$V_{ctrl}$ $=$ Control voltage $(\dfrac{\% \mathrm{~of~} V_{CC}}{100})$
$T = -\mathrm{ln}(1-V_{ctrl}) \cdot R \cdot C$
The result may not be accurate if the timing resistor is lower than 5kΩ $f_{osc} \approx \dfrac{1.8}{R_t \cdot C_t}$
TL494/KA7500 frequency
$f_{osc} \approx \dfrac{1}{R_t \cdot C_t}$
Voltage regulator feedback
Enter three quantities, the other one will be auto-calculated $V_{out} = V_{ref} \cdot (\dfrac{R2}{R1}+1)$
Chip
Voltage
LM317T
1.25V
MC34063
1.25V
LM2576-ADJ
1.23V
LM2596-ADJ
1.23V
UC384x (VFB)
2.5V
MOSFET, IGBT, diode switching loss calculator, SEMIKRON AN1403 method
Calculate conduction loss separately (approximately IRMS*resistance for FETs, or IAVG for diodes and IGBTs). Gate drive loss is neglected.
The "scaling factor" KS is not included in the Semikron PDF. According to simulations, if a MOSFET has a certain switching loss with certain gate drive resistance (external+internal gate resistance) and it is doubled, the loss will be also roughly doubled (Ks≈2). The MOSFET coefficients also aren't present in the original PDF and were determined empirically through simulations. Switch and diode losses must be calculated separately. Calculate turn-on and turn-off losses separately and add the results. Diode turn-on losses are usually neglectable compared to conduction and turn-off. $P_{sw} = f \cdot E_{ref} \cdot (\dfrac{I}{I_{ref}})^{K_I} \cdot (\dfrac{V}{V_{ref}})^{K_V} \cdot (1 + K_T \cdot (T-T_{ref})) \cdot K_S$
MOSFET switching loss estimation
Calculate conduction loss separately (approximately IRMS*resistance for FETs, or IAVG for diodes and IGBTs). Switch and diode (internal diode - if it conducts) losses must be also calculated separately. Don't forget to add prefixes, times are usually in nanoseconds. The gate resistance effect (tr, tf depend on Rg) calculation is usable only if the gate drive voltage is close to the reference. If only a light load is switched at a high frequency, it might be a good idea to add the D-S capacitance discharge loss. However, this capacitance might also reduce turn-off loss. The coefficients were determined theoretically by linearizing the waveform and integrating instantaneous power through the switching times while rising/falling. Select "Custom" in dropdown menus to use custom Kl.
$K_g = \dfrac{R_{g\_{int}}+R_{g\_{ext}}}{R_{g\_{int}}+R_{{g\_{ext}}\_{ref}}}$
$E_{cap} = 0.5 \cdot C_{oss} \cdot {V^2_{ds\_{off}}}$
${E_{sw}}_{on} = K_c \cdot K_g \cdot K_l \cdot t_r \cdot {V_{ds\_on}} \cdot {I_{d\_on}}$
${E_{sw}}_{off} = K_c \cdot K_g \cdot K_l \cdot t_f \cdot {V_{ds\_off}} \cdot {I_{d\_off}}$
$P_{sw} = f*({E_{sw\_on}}+{E_{sw\_off}}+E_{cap})$
MOSFET/IGBT gate drive loss
$P_{gd} = f \cdot V_{gs\_s} \cdot Q_g$
MOSFET, IGBT, diode, resistor conduction loss calculator
Enter only quantities related to the waveform and part type This function is quite complex and not well tested yet, implemented only based on theory with few simulations, USE AT YOUR OWN RISK.
For simplicity, constant voltage drop + already rectified signal is assumed for diodes, constant resistance is assumed for MOSFETs. ${P_{D,IGBT}} \approx V_{drop} \cdot I_{ARV}$
$P_{MOSFET} \approx R \cdot I^2_{RMS}$ Table
Multiply RMS value of sine/triangle by sqrt(2) to get RMS value of half-rectified sine/triangle